2N5365 SPC, CIKLU, FUNKCIJAS
Daļas nosaukums: 2N5365
Ražotājs: GESS[GE Solid State]
Packing:
Apraksts:
Pins:
Temperatūra: Min °C | Max °C
Izmērs: KB
- 2N5301
Silicon Power Transistors - 2N5302
Bipolar Device Bipolar Device Metal Package. - 2N5302/D
High-Power NPN Silicon Transistor - 2N530206
High−Power Silicon Transistor - 2N5302G
High−Power Silicon Transistor - 2N5302_06
High−Power NPN Silicon Transistor - 2N5303
HIGH POWER SILICON TRANSISTOR - 2N5304
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 10A I(C) | TO-210AC - 2N5305
SILICON DARLINGTON TRANSISTORS - 2N5306
SILICON DARLINGTON TRANSISTORS - 2N530602
Darlington Transistor - 2N5306A
SILICON DARLINGTON TRANSISTORS - 2N5306_02
NPN Darlington Transistor - 2N5307
Darlington Transistor - 2N530702
General Purpose Amplifier